Multilevel memory and artificial synaptic plasticity in P(VDF-TrFE)-based ferroelectric field effect transistors

Y. Sun, N. He, Y. Wang, Q. Yuan and D. Wen

Nano Energy 98, 107252 (2022)
Multilevel data memory and artificial synaptic plasticity in poly(vinylidene fluoride-co-trifluoroethylene) [P(VDF-TrFE)] ferroelectric field effect transistors were demonstrated. The dynamics of ferroelectric polarization transformation modulate potential of transistor channel, and adjust the electric field of the P(VDF-TrFE) ferroelectric film by potential along channel direction, thus realizing the multilevel nonvolatile memory state. The artificial synaptic plasticity of transistor is simulated, and the long-term plasticity of excited/inhibited postsynaptic current, paired impulse facilitation/inhibition, and spike-rate-dependent plasticity is realized. In long-term potentiation/depression simulation of devices, the conductivity symmetry and linearity are improved by setting the amplitude of the pulse increments. In addition, the vector-matrix multiplication operation was performed in a crossbar array. This work demonstrates the scheme to develop the P(VDF-TrFE) transistors-based multilevel memory and neural morphological computing.