E. Awad, M. Abdel-Rahman and M. Fakhar Zia
IEEE Photon. J., p. 480147 – Plasmonics (2014)
A localized nanoplasmonic induced absorption enhancement in silicon nitride (Si3N4) dielectric material using a nanoscale novel checkerboard gold (Au) structure is demonstrated. The plasmonic electric field and optical absorption enhancement are measured using scanning near-field optical microscopy. Finite-difference time-domain simulations are utilized to characterize the absorption spectral response enhancement together with its dependence on incidence angle and polarization. The checkerboard device shows polarization-independent absorption enhancement with incidence angles.