Terahertz near-field microscopy below 30nm spatial resolution

neaspec GmbH and Fraunhofer IPM have developed a ready-to-use terahertz system that is capable of achieving a spatial resolution of 30 nanometers in combination with neaspec’s near-field microscope – neaSNOM

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Nano-imaging probes molecular disorder in organic semiconductors

Using nano-FTIR neaSNOM it could be shown that thin-film organic semiconductors contain regions of structural disorder. These could inhibit the transport of charge and limit the efficiency of organic electronic devices.

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Ultrafast spectroscopy of electronic nano-motion in nanowires

The neaSNOM microscope equipped with a THz illumination unit were applied in ultrafast spectroscopy to take snapshots of super-fast electronic nano-motion. The scientists were able to record a 3D movie of electrons moving at the surface of a semiconductor nanowire.

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Controlling Graphene plasmons with resonant antennas & conductivity patterns

neaspec’s neaSNOM microscope allows for launching and controlling light propagating along graphene, opening new venues for extremely miniaturized photonic devices and circuits

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Plasmon Mapping on Graphene with neaSNOM

Two independent research teams have successfully used their neaSNOM infrared near-field microscopes for laying down a ghost: visualizing Dirac plasmons propagating along graphene, for the first time.

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Mapping local conductivity in semiconductor devices

Near-field microscopy at infared and terahertz frequencies allows to quantify free carrier properties at the nanoscale without the need of electrical contacts.

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Identification of materials in semiconductor devices

Based on their unique near-field spectral signature infrared-active materials can be identified with neaSNOM.

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Investigating local conductivity of semiconductor nanowires

The local conductivity of nanowires can be investigated by infrared near-field microscopy.

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