Terahertz near-field microscopy below 30nm spatial resolution

neaspec GmbH and Fraunhofer IPM have developed a ready-to-use terahertz system that is capable of achieving a spatial resolution of 30 nanometers in combination with neaspec’s near-field microscope – neaSNOM

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Nano-imaging probes molecular disorder in organic semiconductors

Using nano-FTIR neaSNOM it could be shown that thin-film organic semiconductors contain regions of structural disorder. These could inhibit the transport of charge and limit the efficiency of organic electronic devices.

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Mapping local conductivity in semiconductor devices

Near-field microscopy at infared and terahertz frequencies allows to quantify free carrier properties at the nanoscale without the need of electrical contacts.

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Identification of materials in semiconductor devices

Based on their unique near-field spectral signature infrared-active materials can be identified with neaSNOM.

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Nanoscale phase transitions

The high spatial resolution of infrared near-field microscopy allows for detailed studies of phase transitions in materials like the insulator-to-metal transition of vanadium dioxide (VO2) thin films.

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Non-invasive imaging of stress/strain fields

Mapping nanoscale stress/strain fields around nanoindents in the surface of Silicon Carbide (SiC) crystals. Compressive/tensile strain occurs in bright/dark contrast respectively.

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