neaspec GmbH and Fraunhofer IPM have developed a ready-to-use terahertz system that is capable of achieving a spatial resolution of 30 nanometers in combination with neaspec’s near-field microscope – neaSNOM
Using nano-FTIR neaSNOM it could be shown that thin-film organic semiconductors contain regions of structural disorder. These could inhibit the transport of charge and limit the efficiency of organic electronic devices.
Near-field microscopy at infared and terahertz frequencies allows to quantify free carrier properties at the nanoscale without the need of electrical contacts.
Based on their unique near-field spectral signature infrared-active materials can be identified with neaSNOM.
The high spatial resolution of infrared near-field microscopy allows for detailed studies of phase transitions in materials like the insulator-to-metal transition of vanadium dioxide (VO2) thin films.
Mapping nanoscale stress/strain fields around nanoindents in the surface of Silicon Carbide (SiC) crystals. Compressive/tensile strain occurs in bright/dark contrast respectively.