Researchers at the University of Stuttgart equipped with a neaSCOPE have now succeeded to observe switching processes at unattained nanometer resolution.
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Using nano-FTIR neaSCOPE it could be shown that thin-film organic semiconductors contain regions of structural disorder. These could inhibit the transport of charge and limit the efficiency of organic electronic devices.
The high spatial resolution of infrared near-field microscopy allows for detailed studies of phase transitions in materials like the insulator-to-metal transition of vanadium dioxide (VO2) thin films.