NeaSNOM Application Notes

Uncover the secrets of the nanoworld with the NeaSNOM platform

Exploiting the broad infrared spectral region from visible to terahertz, NeaSNOM enables nanoscale-resolved mapping and quantification of different material properties such as

Requiring minimal sample preparation, the NeaSNOM platform is ideally suited for nondestructive investigation of

Whether you would like to profile free carrier distribution in semiconductor nanorods, quantify doping levels in a single transistor, investigate the morphology of a polymer blend or visualize dark modes of nano-antennas…

…NeaSNOM is ready for the challenge!

Selected application notes
Details Title Short Description
Analysis of semiconductor device structures Semiconductor device structures can be characterized by near-field microscopy at suitable wavelengths.
Identification of materials in semiconductor devices Based on their unique near-field spectral signature infrared-active materials can be identified with NeaSNOM.
Mapping local conductivity in semiconductor devices Near-field microscopy at infared and terahertz frequencies allows to quantify free carrier properties at the nanoscale without the need of electrical contacts.
Spectroscopic indentification of materials NeaSNOM enables spectroscopic identification of materials at the nanometer scale.
Characterization of polymer blends Near-field images of a polymer blend made of Polystyrene (PS) and Poly (methyl methacrylate) (PMMA) reveal the nanostructured phase separation of the materials.
Studying single viruses Recording “fingerprint” spectra of single viruses and polymer nanobeads allows for identification of individual particles.
Investigating local conductivity of semiconductor nanowires The local conductivity of nanowires can be investigated by infrared near-field microscopy.
Identification of individual nanoparticles Near-field imaging allows to distinguish individual nanoparticles of only 7nm in diameter.
Structural analysis of IR-active materials Structural modifications of infrared-active materials can be detected and spatially mapped by near-field imaging at the appropriate frequencies.
Non-invasive imaging of stress/strain fields Mapping nanoscale stress/strain fields around nanoindents in the surface of Silicon Carbide (SiC) crystals. Compressive/tensile strain occurs in bright/dark contrast respectively.
Nanoscale phase transitions The high spatial resolution of infrared near-field microscopy allows for detailed studies of phase transitions in materials like the insulator-to-metal transition of vanadium dioxide (VO2) thin films.
Imaging optical gap fields Highly confined optical fields (“hot spots”) can be detected in the gap between nanoparticles.
Analyzing optical antennas Amplitude and phase resolved near-field mapping of the local field distribution on resonant IR antennas can be used to analyze the antenna design and its functionality.
IR nanofocusing on transmission lines Direct visualization of infrared light transportation and nanofocusing by miniature transmission lines is possible by amplitude- and phase-resolved near-field microscopy.
Mapping optical fields of resonant particles Near-field imaging of resonant gold nanodiscs reveals a dipolar oscillation mode.
Studying superlensing and meta-materials Direct verification of superlensing can be achieved by near-field microscopy as the local field transmitted by a superlens can be investigated in the near-field of the lens.
Characterization of optical surface waves Amplitude and phase resolved studies of surface wave (propagating surface phonon polaritons) propagation and interference.
Near-field spectroscopy with broadband laser sources Neaspec introduces a broadband near-field infrared spectroscopy technique using fs-pulsed laser sources for tip illumination. Continous spectra can be recorded within only few seconds.
Nano-FTIR near-field spectroscopy The NeaSNOM system allows for recording infrared spectra with a thermal source at a resolution that is 100 times better than in conventional infrared spectroscopy.